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Cathode Powders for Li-ion Battery
Choose from our range of high-quality Cathode Powders for Li-ion Batteries, including single crystals and precursor powders. Download the...
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CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm - FmCeO2onYSZa101005S1FT40nm
Specifications: Epitaxial thin Film Composition: <100> CeO2 Epitaxial Film Thickness: 40 nm +/- 10 nm Growth method: Spin ...
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CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm,2sp - FmCeO2onYSZa101005S2FT40nm
Specifications: Epitaxial thin Film Composition: <100> CeO2 Epitaxial Film Thickness: 40 nm +/- 10 nm Epitaxial FWHM: <...
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CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm - FmCeO2onYSZe101005S1FT40nm
Specifications: Epitaxial thin Film Composition: <110> CeO2 Epitaxial Film Thickness: 40 nm +/- 10 nm Epitaxial FWHM: <...
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CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp - FmCeO2onYSZc101005S1FT40nm
Specifications: Epitaxial thin Film Composition: <111> CeO2 Epitaxial Film Thickness: 40 nm +/- 10 nm Epitaxial FWHM: <...
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CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 2sp - FmCeO2onYSZc101005S2FT40nm
Specifications: Epitaxial thin Film Composition: <111> CeO2 Epitaxial Film Thickness: 40 nm +/- 10 nm Epitaxial FWHM: < ...
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Chemistry-design Diaphragm Pump, VACP-D410
Pumping Speed: 25 L/min Max. vacuum: 13 mbar Motor Speed: 1700 rpm, 1450 rpm Outlet: 10mm Two-stage pump Built-in thermal protection de...
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CIP- P - Transducers of active / reactive power
Type: active or reactive power Class: 0.2 Load: balanced or unbalanced Dimensions: 65.5 x 78.5 x 106.5 mm Product Features: The CIP-P i...
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CIP-CA/CV - Transducers of Current / Voltage
Type: voltage / current Class: 0.2 Dimensions: 65.5 x 22.5 x 100.5 mm Product Features: The transducer CIP-CA / CIP-CV convert a sinuso...
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CIP-HZ - Transducers of Frequec
Type: Frequency Class: 0.2 Dimensions: 65.5 x 43.75 x 106.5 mm Product Features: The CIP-Hz transducer is used for frequency measuremen...
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CIP-V/I - Transducers of voltage or current
Type: voltage / current DC Class: 0.2 Dimensions: 65.5 x 43.75 x 106.5 mm Product Features: The transducers CIP-V / CIP-I are used to m...
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CMM970C Multifunction Meter
Dimensions: 90 x 80 x 66.3 mm Auxiliary: 85 up to 270V Ac (50/60Hz) Display: 3 lines / LCD Product Features • Import / Export Energy (a...
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Complete Redox Flow Battery Test Cell Setup
Complete Redox Flow Battery test cell setup for test of vanadium flow batteries or other battery chemistries Features: Everything you ne...
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Conductive Graphite Powder for Li-ion Battery Anode/Cathode, 80g/bag - EQ-Lib-CGP
MPN: Lib-CGP Conductive Graphite is used as conductive material when preparing Li-ion battery Cathode and Anode. It has strong inoxidizab...
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CPQT2: 2 Analog outputs / CPQT4: 4 Analog outputs
Outputs: 4 analogue outputs Range: +/- 20mA, +/- 5mA or +/-10V Class: 0.2 mm Dimensions: 70 x 132 x 101 mm - DIN rail Product Features...
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Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp
Specifications: Cu coated Si Wafer ( 10x5 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness o...
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Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Specifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness ...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusio...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Th...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 100 nm Thickness of Ta di...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffus...
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