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0.0001g Analytical Balance, BA-E Series
Readability: 0.0001g Max. Capacity: 100g; 110g; 120g; 200g; 210g; 220g; External Calibration Tare Function/Counting Overload Alarm Prod...
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0.0001g Analytical Balance, BA-P Series
Readability: 0.0001g Max. Capacity: 210g; 310g; 410g; 510g; 610g Internal Calibration Tare Function/Counting Overload Alarm Product Fea...
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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCOYBa2Cu3Ox ( X= 6.8 -6.9 ) Film dimension both...
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2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm
2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition Specifications: Substrate: InP Orientation: (100) Doped...
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi-Insula...
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2-8℃ Single Door Laboratory Refrigerator, PR5-100
Capacity:100L Cooling method:Forced Air Cooling System Defrost:Auto Refrigerant:R600a Sensor Type:NTC Temperature controller:Microproces...
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2~8℃ Single Door Laboratory Refrigerator, PR5-60
Capacity:60L Cooling method:Forced Air Cooling System Defrost:Auto Refrigerant:R600a Sensor Type:NTC Temperature controller:Microproces...
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4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
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4" P-type Ge film on N-type Silicon Wafer, 0.5 um thickness - FmGePtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
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4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US
Specifications Film: 4H-SiC (0001) Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10% Film target do...
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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
Specifications Film: 4H-SiC (0001) Film target thickness: 11 um with (thickness acceptation range) +/- 10% Conductive Type ...
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500nm-thick Mo-coated Sodalime Glass, 100 mm(L) x 100 mm(W) x 1.1 mm thk
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo depo...
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500nm-thick Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th - Mo-coated Glass-201507
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo de...
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500nm-thick Mo-coated Sodalime Glass, 25 mm(L) x 25 mm(W) x 0.7 mm th - FmMoCoatedGlass252507FT500
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo dep...
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8 Channel Battery Tester
8 Channel battery tester with 0-5V range with different current ranges. Battery tester must be connected to a PC (not included). ...
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A-Cell – Redox Flow Battery Test Cell
Redox Flow Battery Test Cell Redox Flow Battery (RFB) lab cell for test of vanadium flow batteries or other battery chemistries. ...
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Aluminium Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm
Aluminium Metallic Film Specifications: Film-coated by E-beam evaporation under vacuum below 10-6 torr Evaporation rate: 0.2 manometer p...
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Aluminium Nitride (AlN) Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1
Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Size: 1" x 1" x 0.5 mm Polishing: one side polishe...
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Aluminium Nitride (AlN) Ceramic Substrate 1"x1"x 0.635mm, fine ground
Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Size: 1" x 1" x 0.635 mm Polishing: Fine Ground Su...
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Aluminium Nitride (AlN) Ceramic Substrate 10x10x 0.5mm, 1SP - CmAlN101005S1
Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AN5116) Size: 10 x 10 x 0.5 mm Polishing: one side polishe...
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Aluminium Nitride (AlN) Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides - CmAlN11411405SN
Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AN5116) Thermal Conductivity (W/m. K): >170 Size: 114.3 ...
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Aluminium Nitride (AlN) Ceramic Substrate 2"x2"x0.254mm, as lapped, CmAlN50500254SN
Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Thermal Conductivity (W/m.K): >170 Size: 2'' x ...
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Aluminium Nitride (AlN) Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS
Specifications: Useful area: 90% Nominal AlN thickness: 500nm ±10%, one side coated, undoped AlN film Front Surface: as-grown Back surf...
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Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100)
Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um, Si(100) 1. Aluminum Metallic Film: P-type B-doped R:1-20 ohm.cm Film-c...
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