4" P-type Ge film on N-type Silicon Wafer, 0.5 um thickness - FmGePtypeonSiNtypea101D05C1US

Specifications:

• Silicon Wafer
• Type:           N/ P doped
• Orientation:  (100)
• Size:           4'' dia
• Thickness:   500 - 550 um
• Grade:         Prime
• Flates:         2 SEMI-STD on Axis 0 degree off
• Backside:    Etch
• Particles:     < 50 @ >0.20 um
• Resistivity:   1-10 ohm.cm
• TDD:              <1E8 cm^2

• Film: Ge epi-film 
• Thickness:     0.5 um +/- 3%
• Orientation:   (100)
• Type:            P-type 
  
• Dopant concentration: ~1E19 /cc
• Current RMS spec: Ra < 2 nm

MPN: FmGePtypeonSiNtypea101D05C1US