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MTI Corporation

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm

2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

Specifications:   

  • Substrate:
    • InP Orientation: (100)
    • Doped with Fe, Semi-Insulating
    • Wafer size: 2" diameter x 0.35 mm
    • Both sides polished
  • EPI Film :
    • Lattice matched In/Ga alloy layer of N-type InGaAs(undoped)
    • Film Thickness :0.75 um (+/- 20%)
    • Roughness of epi-layer is close to 1 mono-layer (ML)
    • One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

 (2.1-2.7) x107

<5000

 

MPN: FmInGAonIPFea50D035C2FT750US5

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