Boron Nitride Film on Silicon Wafer

Boron Nitride Film Specifications:

• BN Film coated by sputtering method
• The amorphous structure ( no orientation)
• Dielectric
• BN Thickness: 24 nm +/- 10%
• Purity: > 99.99%

Silicon Wafer Specifications:

• Conductive type: Si n-type
• Resistivity: 0.1-1.0 ohm-cm
• Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm ( thickness)
• Orientation: (100) +/- 0.5o
• Polish: One sides polished
• Surface roughness: Prime
• Packing: Vacuum packed on a 4" single wafer carrier box

MPN: FmBNonSia100D0525C1FT24nm