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4" P-type Ge film on N-type Silicon Wafer, 0.5 um thickness - FmGePtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
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4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
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YIG Film (3 micron) on GGG Substrate, (111), 1"x0.5mm, (single side coated)
YIG (Yttrium Iron Garnet) epitaxial thin film on GGG single substrate is an excellent alternative for expensive YIG crystal. Specificati...
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YIG Film (3 micron) on GGG Substrate, (111), 5mmx5mmx0.5mm, 2sp (single side coated)
YIG (Yttrium Iron Garnet) epitaxial thin film on GGG single substrate is an excellent alternative for expensive YIG crystal. Specificati...
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YIG Film (3 micron) on GGG Substrate, (111), 10mmx10mmx0.5mm,2sp (single side coated)
YIG (Yttrium Iron Garnet) epitaxial thin film on GGG single substrate is an excellent alternative for expensive YIG crystal. Specificati...
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One side YIG Epi Film ( 3.08 microns) on GGG Substrate, (111), 5x5x0.5mm(2sp)
YIG (Yttrium Iron Garnet) epitaxial thin film on GGG single substrate is an excellent alternative for expensive YIG crystal. Specificati...
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One side YIG Epi Film ( 3.08 microns) on GGG Substrate, (111), 10x10x0.5mm(2sp),
Specifications Film: Composition: YIG ( Yttrium Iron Garnet ) Growth Method: ...
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YBCO Thin Film 500nm (two sides) on Al2O3(R-plane), 10x5x0.5 mm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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YBCO Thin Film 500nm ( two sides ) on Al2O3(R-plane), 3" dia.x0.5 mm,2sp - R76D05C2FT500US
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO YBa2Cu3Ox ( X= 6.7 -6.9 Film dimension both ...
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YBCO Thin Film 500nm ( two sides ) on Al2O3(R-plane), 10x10x0.5 mm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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YBCO Thin Film 400nm ( one side ) on LaAlO3 (100), 10x10x0.5 mm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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YBCO Thin Film 100nm (one side) on LaAlO3 (100), 10x10x0.5 mm - FmYBCOonLAOa101005S1FT100nm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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One Side 100nm YBCO Film on SrTiO3(100) 10x10x0.5 mm substrate - FmYBCOonSTOa101005S1FT100nm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimensionboth for one side or double side fi...
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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCOYBa2Cu3Ox ( X= 6.8 -6.9 ) Film dimension both...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Specifications: Silicon Nitride Film Si3N4 Film-coated by low-stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon-on-Sapphire (11-02, R Plane), 5mm x 5mm x 0.46 mm, 2sp, Film: 0.5um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/-1...
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Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:1.0 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:0.6 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- ...
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