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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- 10%R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- 10% R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Specification: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 u...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick
Specifications Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +...
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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
Specifications Specifications Device Layer Size: 5mmx5mm Type/Dopant: N type/P-doped Orientation: &...
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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Specifications PSpecifications Device Layer Diameter: 6" Type/Dopant: N type/P-doped Orientation: ...
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SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)
Specifications Device Layer Size: 10x10 Type/Dopant: N type/P-doped Orientation: <1-0-0>+/-0....
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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
Specifications Film: 4H-SiC (0001) Film target thickness: 11 um with (thickness acceptation range) +/- 10% Conductive Type ...
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4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US
Specifications Film: 4H-SiC (0001) Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10% Film target do...
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SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp SiO2=300nm Ti=10nm Pt(111)=150n...
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SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp) SiO2=300 nm ...
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SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) R...
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SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Specifications: Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) Substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm) Res...
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Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1
Nickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) - oriented polycrystals Silicon Wafer Specifications: Conductiv...
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Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Film Specifications Nickel Film Thickness: 100nm Film Crystallinity: (111) - oriented polycrystals Silicon Wafer Specifications: C...
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500nm-thick Mo-coated Sodalime Glass, 25 mm(L) x 25 mm(W) x 0.7 mm th - FmMoCoatedGlass252507FT500
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo dep...
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500nm-thick Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th - Mo-coated Glass-201507
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo de...
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ITO/ZnO Coated Glass Substrate 1" x 1" x 0.7 mm, ITO Film=100nm, ZnO film=50nm
Specifications: ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm Dimension: 1" x 1" x 0.7 mm Resistivity: N/A IT...
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ITO film on Corning 7980,10x10x 0.5mm R: 9-15 ohm/sq - FmITOonCorning7980101005US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 10x10x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq No...
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ITO film (180 nm) on Corning 7980, 6 "x 6"x 0.5mm R: 9-15 ohm/sq, - FmITOonCorning798015215205US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 6 "x 6"x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq ...
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ITO film (180 nm) on Corning 7980, 1 "x 1"x 0.5mm R: 9-15 ohm/sq - FmITOonCorning7980252505US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 1"x 1"x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq No...
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ITO Coated Plastic PET Film, 0.175mm Thick x 350mm Width x 300 mm Length ,60 ohm/sq-1
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Surface: Industrial grade Dimension: 350...
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