Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,

Specifications:

Silicon EPI Layer:

• Silicon Orientation: (100)
• Type, Dopant:  Intrinsic type, undoped
• Silicon Thickness: 0.6 um +/- 10%
• Resistivity: > 100 ohm.cm
• Micro-particle density ( for particles > 2 um) < 2/cm^2

 
Sapphire Wafer:

• R plane -- (1-102)  with  single flat
• Purity:  99.996%
• Wafer size:   100 mm  dia x 0.46 mm thickness
• Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
• Front surface: Epi-polished (Ra < 4 nm)
• Back surface: Optical grade polish
• TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat