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MTI Corporation
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Specifications:
Silicon EPI Layer:
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Silicon Orientation: (100)
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Type, Dopant: Intrinsic type, undoped
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Silicon Thickness: 1.0 um +/- 10%
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Resistivity: > 100 ohm.cm
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Micro-particle density ( for particles > 2 um) < 2/cm^2
Sapphire Wafer:
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R plane -- (1-102) with single flat
Purity: 99.996% -
Wafer size: 100 mm dia x 0.46 mm thickness
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Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
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Front surface: Epi-polished (Ra < 4nm)
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Back surface: Fine ground
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TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat
MPN: FmSOS100DD046C1FT10US
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