SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)

Specifications:

• Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp
  • SiO2=300nm
  • Ti=10nm
  • Pt(111)=150nm
• Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Substrate Size:            4" diameter +/- 0.5 mm x 0.525 mm
• Polish:                        one side polished
• Surface roughness:      < 20 A RMS
• Maximum Thermal Budget of Pt/Ti film-coated SiO2/Si wafers: < 650-700 C/ 1 hr in air
• Optional:  you may need tool below to handle the wafer ( click picture to order )