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ITO Coated Plastic PET Film, 0.175mm Thick x 350mm Width x 1 Meter Length ,60 ohm/sq
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Surface: Industrial grade Dimension: 350 mm widt...
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ITO Coated Plastic PET Film, 0.175mm Thick x 300mm Width x 300mm Length, 14 ohm/sq, ITO layer: 115nm+/- 10nm
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Coating method: Magnetron sputtering Dimensi...
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ITO Coated Plastic PET Film, 0.175mm Thick x 300mm W x 1 M ,R<=14 ohm/sq, ITO layer: 115nm
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Coating method: Magnetron sputtering Dimension...
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ITO Coated PEN Plastic Film, 0.125mm Thick x 72mm W x 105mm L, 12 ohm/sq, PEN layer=0.125 mm, ITO layer>180 nm
Specifications: Plastic materials: PEN (DuPont Teijin Teonex) film-Q65HA Coating method: Magnetron sputtering Dimension: 72 mm width ...
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ITO Coated PEN Plastic Film, 0.125 Tx210Wx297L (mm),12 ohm/sq, ITO layer>180 nm - ITO-PEN-15K
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PEN (DuPont Teijin Teonex ) film-Q65HA Coating method: ...
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Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition Substrate: N-type S doped InP [100]±0.5°, Nc=~5E18/cc Wafer Size: 3" di...
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi-Insula...
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2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm
2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition Specifications: Substrate: InP Orientation: (100) Doped...
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Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
Specifications: Research Grade , about 90 % usable area GaN template, N+, 2” in diameter FLAAT (Flat Layers At All Temperatures) GaN ...
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GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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FTO Glass Substrate (TEC 70) 100x100 x 3.2 mm, R:58-72 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) coated Glass Plates ( Corning brand-TEC70 ) Dimension: 100x100 x 3.2 mm Nominal FTO Film thi...
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FTO Glass Substrate (TEC 70) 1.0" x 3" x 3.2 mm, R: 58-72 ohm/sq ,25pcs /pack - FTO257632TEC70gp25
Specifications: Fluorine-Tin-Oxide (FTO) coated Glass Plates (TEC70 ) Dimension: 1" x 3" x 3.2 mm Nominal FTO Film thickness: 150 nmRe...
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FTO Glass Substrate (TEC 7) with Pattern 1" x 1" x 1.1 mm, R: 7-10 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates, with Pattern Dimension: 1" x 1" x 1.1 mm Nominal FTO Film thickness: ...
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FTO Glass Substrate (TEC 7) 20mm x 20mm x 3.0 mm, R: 6-8 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates (TEC7 ) Dimension:20mm x 20mm x 3.0 mm Nominal FTO Film thickness: 250...
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FTO Glass Substrate (TEC 7) 100 x 100 x 1.1 mm, R: 7-10 ohm/sq 5 pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates Dimension: 100 mm x 100 mm x 1.1 mm Nominal FTO Film thickness: 250 nm...
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FTO Glass Substrate (TEC 7) 1.0" x 3" x 3.0 mm, 6-8 ohm/sq, 25pcs /pack - FTO257630TEC7gp25
Specifications: Fluorine-Tin-Oxide (FTO) Coated Glass Plates (TEC7 ) Dimension: 1" x 3" x 3.0mm Nominal FTO Film thickness: 250 nm Re...
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FTO Glass Substrate (TEC 7) 1" x 1" x 3.0 mm, R: 6-8 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates (TEC7 ) Dimension: 1" x 1" x 3.0 mm Nominal FTO Film thickness: 250 nm...
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