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MTI Corporation

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron

-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications:

  • Sizes 2” Round
  • Dimensions 50.8mm  +/- 0.25mm
  • Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 o
  • Substrate Sapphirethickness: 0.43mm+/-0.025mm
  • Conduction Type: N-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90%
  • Edge Exclusion Area 1mm
  • Dislocation Density: <5x10^8 cm^−2
  • Package Single Wafer Container
  • GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS 

MPN: FmGaNonALC50D05C1FT4to5um


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