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MTI Corporation

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um

GaN  Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications:

  • Size : 5mmx5mm
  • Substrate Sapphire,  Orientation C (0001) +/- 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90%
  • Edge Exclusion Area 1mm
  • Package Single Wafer Container
  • GaN layer thickness   4-5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

MPN: FmGaNonALC0505055S1FT4to5um


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