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MTI Corporation
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
Specifications:
- Research Grade , about 90 % usable area
- GaN template, N+, 2” in diameter
- FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer )
- FLAAT Gallium Nitride Template, N+ (Si-doped)
- 2” in diameter, Si-doped
- Polarity: Ga-face
- Carrier Concentration: > 1E18/cm^3
- Nominal GaN Thickness: 15 um +/- 10 %
- Front side surface(after deposition and polish): Epi-ready with,
- Ra< 0.5 nm RMS (data obtained via using a white light interferometer )
- Back side surface: Substrate as received
- Substrate: Sapphire, 2”, c-plane 0.20 deg offcut towards m-plane
- SSP, 430 um
- Backside: substrate as received
- Click here to see picture of FLAAT structure
MPN: FmGaNSionALc50D15C1US
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