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MTI Corporation
GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm
GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.
Specifications:
- Nominal GaN thickness: 0.20μm ± 0.1 μm
- Front Surface finish (Ga-face): <1nm RMS, As-grown,
- Back surface finish: Silicon ( 111) N-type P-doped R:1-10 ohm.cm
- GaN orientation: C-plane (00.1)
- Polarity: Ga-face
- Conduction Type: Undoped (N-) and resistivities: < 0.05 Ohm-cm
- Macro Defect Density: <1/cm^2
- Wafer base: Silicon [111], 10x10x0.279mm, one side polished
- There is ~200nm AlN buffer layer between the silicon and GaN
MPN: FmGaNonSiPc10100279C1FT200
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