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MTI Corporation
GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um
GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications:
- Production gradeSizes 2” Round
- Dimensions 50.8mm +/- 0.25mm
- Substrate Sapphire, C-plane-(0001) with 0.2 degree miscut toward M-plane
- Conduction Type: N-type,
- Resistivity :N/A
- Front Surface Finish (Ga Face) As-grown
- Back Surface Finish Sapphire as-received finish
- Useable Surface Area >90%
- Edge Exclusion Area 1mm
- Package Single Wafer Container
- GaN layer thickness : 30 microns , (+/- 10%) with roughness: ~10 nm RMS as
- Measured by the Wyko (white light interferometer) for 50 umx50um area
- Macro Defect Density: <=5 cm^-2
- Lattice Constant Mismatch: 14% mismatch
- Dislocation Density: 5x10^9/ cm^2
MPN: FmGaNonALC50D05C1FT30um
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