Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

Specifications:

Silicon EPI Layer:

• Silicon Orientation: (100)
• Type, Dopant:  Intrinsic type, undoped
• Silicon Thickness:1.0 um +/- 10%
• Resistivity: > 100 ohm.cm
• Micro-particle density ( for particles > 2 um) < 2/cm^2
   

• R plane -- (1-102)  with  single flat
• Wafer size: 5x5 x 0.46 mm thickness
  
• Front surface: Epi-polished (Ra < 4 nm)
• Back surface: Optical grade polish
• TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um

MPN: FmSOS0505046S2FT10US