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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Specifications: Silicon Nitride Film Si3N4 Film-coated by low-stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick
Specifications Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 u...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Specification: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- 10% R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- 10%R...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:0.6 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:1.0 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane), 5mm x 5mm x 0.46 mm, 2sp, Film: 0.5um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/-1...
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SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Specifications: Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) Substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm) Res...
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SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) R...
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SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp) SiO2=300 nm ...
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SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp SiO2=300nm Ti=10nm Pt(111)=150n...
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SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)
Specifications Device Layer Size: 10x10 Type/Dopant: N type/P-doped Orientation: <1-0-0>+/-0....
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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Specifications PSpecifications Device Layer Diameter: 6" Type/Dopant: N type/P-doped Orientation: ...
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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
Specifications Specifications Device Layer Size: 5mmx5mm Type/Dopant: N type/P-doped Orientation: &...
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SPECTRO-ELECTROCHEMICAL FLOW CELL SETUP
This is a horizontally mounted, multi-purpose spectroelectrochemical cell designed to be used with standard UV-Vis or IR spectrometers...
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STANDARD ELECTROCHEMICAL CELL SETUP
This is a stationary solution standard electrochemical (electrolytic) cell for measurements of electrodes in a form of: a) rod/disc (6 mm...
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