Collection: Silica on Silicon (Thermal Oxide Wafer)

Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C~1200°C. Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most silicon-based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics. We provide MTI quality and standard thermal oxide wafers in diameter from 2” to 6” at the following links.