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MTI Corporation
Aluminium Nitride (AlN) Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS
Aluminium Nitride (AlN) Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS
Specifications:
- Useful area: 90%
- Nominal AlN thickness: 500nm ±10%, one side coated, undoped AlN film
- Front Surface: as-grown
- Back surface: silicon as received
- AlN orientation: C-plane (00.1)
- Macro Defect Density: <10/cm^2
- Wafer base: Silicon [111] P type, 4" dia x 0.5 mm, , one side polished, R<5 ohm.cm
MPN: FmAlNonSiBc101D05C1FT500nmUS
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