Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100)

Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um, Si(100)

1. Aluminum Metallic Film:

P-type B-doped R:1-20 ohm.cm 

• Film-coated by E-beam evaporation under vacuum below 10-6 torr
• evaporation rate: 0.2 nanometer per second
• Aluminum Thickness: 3 microns
• Film Resistivity: 2.65 micro-ohm-cm
• Film Crystallinity: Weak (111) - oriented polycrystals
• Roughness, RMS: 4.87 nm and < 10 nm

Silicon Wafer Specifications:

• Conductive type: Si P- type, B-doped
• Resistivity: 1- 20 ohm-cm
• Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
• Orientation: (100) +/- 0.5o
• Polish: One side polished
• Surface roughness: Prime
• Packing: Vacuum packed on a 4" single wafer carrier

 

2. Aluminum Metallic Film:

N-type, R:<0.005 ohm.cm

• Film coated by E-beam evaporation under vacuum below 1xE-6 torr
• evaporation rate: 0.2 nanometer per second
• Aluminum Thickness: 3 microns
• Film Crystallinity: Weak (111) - oriented polycrystals

Silicon Wafer Specifications:

Conductive type: Si N- type As-doped

• Resistivity: <0.005 ohm-cm
• Size: 4" diameter x 0.525 mm th
• Orientation: (100) +/- 0.5o
• Polish: One sides polished
• Surface roughness: Prime
• Packing: Vacuum packed on a 4" single wafer carrier

 

3. Aluminum Metallic Film:

N-type, R:1-20 ohm.cm

• Film-coated by E-beam evaporation under vacuum below 10-6 torr
• evaporation rate: 0.2 nanometer per second
• Aluminum Thickness: 3 microns
• Film Resistivity: 2.65 micro-ohm-cm
• Film Crystallinity: Weak (111) - oriented polycrystals
• Roughness, RMS: 4.87 nm and < 10 nm

Silicon Wafer Specifications:

• Conductive type: Si N- type As-doped
• Resistivity: <0.005 ohm-cm
• Size: 4" diameter x 0.525 mm th
• Orientation: (100) +/- 0.5o
• Polish: One sides polished
• Surface roughness: Prime
• Packing: Vacuum packed on a 4" single wafer carrier