Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um ,Si(100) N-type, R:<0.005 ohm.cm - FmAlonSiAsa101D0525C1FT3um

Aluminium Metallic Film Specifications:

• Film coated by E-beam evaporation under vacuum below 1xE-6 torr
• Evaporation rate: 0.2 nanometer per second
• Aluminium Thickness: 3 microns
• Film Crystallinity:  Weak (111) - oriented polycrystals

Silicon Wafer Specifications:

• Conductive type:         Si  N- type As-doped
• Resistivity:                  <0.005  ohm-cm
• Size:                          4" diameter x 0.525 mm thick
• Orientation:                (100) +/- 0.5 degree
• Polish:                        One  sides  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier
  

MPN: FmAlonSiAsa101D0525C1FT3um