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MTI Corporation
Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um, Si(100) N-type, R:1-20 ohm.cm - FmAlonSiPa101D0525C1FT3umR1
Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um, Si(100) N-type, R:1-20 ohm.cm - FmAlonSiPa101D0525C1FT3umR1
Aluminium Metallic Film Specifications:
- Film-coated by E-beam evaporation under vacuum below 10-6 torr
- Evaporation rate: 0.2 nanometer per second
- Aluminium Thickness: 3 microns
- Film Resistivity: 2.65 micro-ohm-cm
- Film Crystallinity: Weak (111) - oriented polycrystals
- Roughness, RMS: 4.87 nm and < 10 nm
Silicon Wafer Specifications:
- Conductive type: Si n- type
- Resistivity: 1- 10 ohm-cm
- Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation: (100) +/- 0.5o
- Polish: One side polished
- Surface roughness: Prime
- Packing: Vacuum packed on a 4" single wafer carrier
MPN: FmAlonSiPa101D0525C1FT3umR1
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