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MTI Corporation
Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Specifications:
- Cu coated Si Wafer ( 10x10 mm size )
- Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
- Thickness of Ta diffusion barrier: 20-50 nm
- 0.525 mm thickness Si wafer (Prime Grade)
- P type, B doped, <100> orientation, SSP
- Resistivities: 1-20 ohm-cm
- Surface Roughness: as grown , RA < 10 nm
- Package: One 1000 class clean room with 100 class plastic bag
- 10 pcs per package for minimum order
MPN: FmCu100Ta20onSiBa101005S1R1
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