Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp

Specifications:

• Cu coated Si Wafer ( 10x5 mm size )
• Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
• Thickness of Ta diffusion barrier: 20-50 nm
• 10x5x 0.5 mm thickness Si wafer (Prime Grade)
• P type, B doped, <100> orientation, SSP
• Resistivities: 1-20 ohm-cm
• Surface Roughness:   as grown ,  RA < 10 nm
• Package: One 1000 class clean room with 100 class plastic bag
• 10 pcs per package for minimum order

Closeout sale! No return or replacement for this product!

MPN: FmCu100Ta20onSiBa100505S1R1