Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

Specifications:

• Cu coated SiO2/Si  Wafer (4 inch size)
• Thickness of Cu polycrystalline <111> film: 100 nm
• Thickness of Ta diffusion barrier: 50 nm
• 4 inch dia SiO2/ Si wafer (Prime Grade)
  • P type, B doped, <100> orientation, Singe side polished
  • Resistivities: 1-20 ohm-cm
  • thermal oxide: 300 nm thickness
• Surface Roughness: as grown
• Package: One 1000 class clean room with 100 class plastic bag

MPN: FmCu100Ta50SO300onSiBa101D05