Graphene Film on Ni/SiO2/Si 100mm diameter

Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer using a CVD process. 

Specifications:   

• Research Grade, about 90 % useful  area
• Wafer Size: 100 mm diameter
• Growth Method:Chemical Vapor Deposition (CVD) Technique
• Film thickness: 1-10 monolayer thick
• Graphene film is multilayer with thickness varying in the range 1-10 layers;
• Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum
• The graphene is grown on Ni film by CVD process.
• Nickel film is deposited on the substrate covered by thermally grown oxide layer
• Thickness of the Ni layer is 400 nm;
• The thickness of the silicon oxide layer is 500 nm;
• The thickness of the wafer is 500 μm
• The crystallographic orientation of silicon is 100;
• Films are continuous with low defect density.
• Atomically thin carbon film ( 1-10 layer )
• Outstanding electronic properties
• Chemical inertness and stability
• Unprecedented mechanical strength
  

MPN: FmGrapheneOnNiandSOandSi100US