MTI
SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm
Specifications:
- Film: SiC Epi film with 3C structure grown by PECVD
- Thickness:1.0um +/- 10%
- Orientation: 3C SiC (111)
- Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
- Type and dopant: N type, Undoped
- Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- TTV： 5-29
- Bow： -9 ~ 3
- Silicon substrate:
- Size: 10x10 x 1.0 mm thickness
- Orientation: (111)
- Type: N type / P doped
- Resistivity:1- 10 ohm.cm
- Polish: Both sides are optical polished
-
3C-SiC Main Properties
- Crystal structure: Zinc blende (cubic), see picture on right
- Lattice constant: a=4.3596 A
- Dielectric constant (high frequency): 6.52 @300
- Density: 3.166 g cm-3 293 K
3C-SiC physical properties, and comparing difference between 3C, 4H & 6H SiC
Share
View full details
