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Silicon Nitride Film
Silicon Nitride Film
1. 100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type B-doped 100 mm dia .x0.525mm thick 1sp R:0.001-0.005 ohm.cm
Silicon Nitride Film
- Si3N4 Film coated by low stress PE-CVD method
- Si3N4 Thickness: 100nm +/- 8%
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Si3N4 covers front polished side of Silicon wafer ONLY
- Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm
Silicon Wafer Specifications:
- Conductive type: Si P- type, B-doped
- Resistivity: 0.001-0.005 ohm-cm
- Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation: (100) +/- 0.5o
- Polish: One side polished
- Surface roughness: Prime
- Packing: Vacuum packed on a 4" single wafer carrier box
2. 1000 nm Silicon Nitride Film (LPCVD) on Si(100) P-type, B-doped 100 mm dia .x0.525mm thick 1sp R:1-20 ohm.cm
Silicon Nitride Film
- Si3N4 Film coated by low stress LPCVD method
- Si3N4 Thickness:1000 nm +/- 10%
-
Si3N4 covers both sides of Silicon wafer
- Refractive Index of Si3N4: 1.95 - 2.05
Silicon Wafer Specifications:
- Conductive type: Si P- type, B-doped
- Resistivity: 1-20 ohm-cm
- Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation: (100) +/- 0.5o
- Polish: One side polished
- Surface roughness: Prime
- Packing: Vacuum packed on a 4" single wafer carrier box
3. 300 nm Silicon Nitride Film (LPCVD) on Si(100) N-type P-doped 100 mm dia .x0.525mm thick 1sp R:1-20 ohm.cm
Silicon Nitride Film
- Si3N4 Film coated by low stress LPCVD method
- Si3N4 Thickness: 300 nm +/- 10%
-
Si3N4 covers both sides of Silicon wafer
- Refractive Index of Si3N4: 1.95 - 2.05
Silicon Wafer Specifications:
- Conductive type: Si N- type, P-doped
- Resistivity: 1-20 ohm-cm
- Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation: (100) +/- 0.5o
- Polish: One side polished
- Surface roughness: Prime
- Packing: Vacuum packed on a 4" single wafer carrier box
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