Collection: Ge epi-film on Si
Germanium (Ge) epitaxial films on silicon (Si) substrates enable lattice-matched integration for advanced electronics and photonics. Ideal for R&D in high-speed devices, infrared photodetectors, and semiconductor applications.
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4" P-type Ge film on N-type Silicon Wafer, 0.5 um thickness - FmGePtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
Regular price $0.00Regular priceUnit price / per -
4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US
Specifications: Silicon Wafer Type: N/ P doped Orientation: (100) Size: 4'' dia Thickness: 500 - 550 um Grade: ...
Regular price $0.00Regular priceUnit price / per