Collection: InGaAs EPI on InP

Indium Gallium Arsenide (InGaAs) epitaxial layers on Indium Phosphide (InP) substrates offer superior electron mobility, high-speed performance, and excellent optoelectronic properties. Ideal for R&D in photodetectors, lasers, and high-frequency devices, our InGaAs epi-wafers ensure high-quality crystal growth and customizable doping levels for advanced semiconductor research.

InGaAs MSDS