Collection: InGaAs EPI on InP
Indium Gallium Arsenide (InGaAs) epitaxial layers on Indium Phosphide (InP) substrates offer superior electron mobility, high-speed performance, and excellent optoelectronic properties. Ideal for R&D in photodetectors, lasers, and high-frequency devices, our InGaAs epi-wafers ensure high-quality crystal growth and customizable doping levels for advanced semiconductor research.
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Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition Substrate: N-type S doped InP [100]±0.5°, Nc=~5E18/cc Wafer Size: 3" di...
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi-Insula...
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2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm
2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition Specifications: Substrate: InP Orientation: (100) Doped...
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