Collection: SOI (Silicon On Insulator)
Silicon on Insulator (SOI) wafers feature a thin silicon layer separated from the substrate by an insulating oxide layer, offering reduced parasitic capacitance, improved speed, and lower power consumption. Widely used in R&D for high-performance electronics, MEMS, and advanced semiconductor devices.
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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
Specifications Specifications Device Layer Size: 5mmx5mm Type/Dopant: N type/P-doped Orientation: &...
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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Specifications PSpecifications Device Layer Diameter: 6" Type/Dopant: N type/P-doped Orientation: ...
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SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)
Specifications Device Layer Size: 10x10 Type/Dopant: N type/P-doped Orientation: <1-0-0>+/-0....
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