Collection: Cu Epitaxial Film on Si (Copper Epi-Film on Silicon)
Copper (Cu) epitaxial thin films on silicon (Si) provide a highly ordered crystal structure, ensuring superior conductivity, low resistivity, and excellent electromigration resistance. Ideal for material research and R&D labs, these films support advanced studies in semiconductor interconnects, electronic materials, and nanotechnology. Grown using precision techniques like Molecular Beam Epitaxy (MBE) or Pulsed Laser Deposition (PLD), they offer atomically smooth surfaces and seamless integration with CMOS technology, making them a valuable tool for cutting-edge research and development.
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Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta di...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffus...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 100 nm Thickness of Ta di...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Th...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusio...
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Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Specifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness ...
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Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp
Specifications: Cu coated Si Wafer ( 10x5 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness o...
Regular price $0.00Regular priceUnit price / per