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Reference electrode Hg/Hg2SO4 103mm (REF621)
Why do we use reference electrodes? The use of a reference electrode enables the comparison of the potentials of different indicator el...
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Reference Electrode Hg/Hg2SO4 120mm Grinded
Why do we use reference electrodes? The use of a reference electrode enables the comparison of the potentials of different indicator el...
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Reference Electrode Hg/HgO
Why do we use reference electrodes? The use of a reference electrode enables the comparison of the potentials of different indicator el...
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Reference Electrode Hg/HgO Grinded
Why do we use reference electrodes? The use of a reference electrode enables the comparison of the potentials of different indicator el...
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Rotary-vane vacuum pump, VACP-R Series
Type: Two-Stage, Oil-sealed Pumping Speed: 3.6-7.2 m3/h, 1-4.8 L/S Speed: 1400 r/min(50HZ), 7720 r/min(60HZ) Oil capacity: 0.7-1.2 L Equ...
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S-Cell – Redox Flow Battery Test Cell
25 cm2 flow battery test cell for optimisation of carbon felt electrodes and bipolar plate. Features: The most unique product on the mar...
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Sample Holder ø15 - Stainless Steel Contact - OrigaTip
Description: The OrigaTip Sample Holder Ø15 – Stainless Steel Contact (Titanium contact also available as an option) is a robust accessor...
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Sample Holder ø8 - Stainless Steel Contact - OrigaTip
Description: The OrigaTip Sample Holder Ø8 – Stainless Steel Contact (Titanium contact also available as an option) is a precision-engine...
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Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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Shaking Incubator, ICB-S0420, ICB-S1020
Temperature control range: Room temperature +5℃~60℃ Time settings: 1min~ 99h59min/∞ Amplitude: 20mm Capacity (250ml beaker): 5 pieces,9 ...
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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm
SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm Specifications: Film: SiC Epi film with 3C st...
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Silicon Nitride Film
1. 100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type B-doped 100 mm dia .x0.525mm thick 1sp R:0.001-0.005 ohm.cm Silicon Nitride Film...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Specifications: Silicon Nitride Film Si3N4 Film-coated by low-stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick
Specifications Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 u...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Specification: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- 10% R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- 10%R...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- ...
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