Collection: Gallium Nitride (GaN) Templates
Gallium Nitride (GaN) templates provide a high-quality crystalline GaN layer on a foreign substrate, offering excellent thermal stability, high electron mobility, and low defect density. Ideal for material research and R&D labs, they enable advanced studies in LEDs, power electronics, RF devices, and optoelectronics. Available in various substrate options and thicknesses, our GaN templates support next-generation semiconductor innovation.
Important Info About GaN Template
- GaN Template For XRD data of P-type Mg doped GaN Template
- GaN Template side with GaN thin film for Mg doped GaN template
- GaN Template Standard Cleaning
- GaN Template
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Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
Specifications: Research Grade , about 90 % usable area GaN template, N+, 2” in diameter FLAAT (Flat Layers At All Temperatures) GaN ...
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GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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