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YBCO Thin Film 100nm (one side) on LaAlO3 (100), 10x10x0.5 mm - FmYBCOonLAOa101005S1FT100nm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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One Side 100nm YBCO Film on SrTiO3(100) 10x10x0.5 mm substrate - FmYBCOonSTOa101005S1FT100nm
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimension both for one side or double si...
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One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCO Film dimensionboth for one side or double side fi...
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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%
Main Specifications of HTS Film Epitaxial thin Film Composition <100> YBCOYBa2Cu3Ox ( X= 6.8 -6.9 ) Film dimension both...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Specifications: Silicon Nitride Film Si3N4 Film coated by low stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Specifications: Silicon Nitride Film Si3N4 Film-coated by low-stress LPCVD method Si3N4 Thickness: 1.3um +/- 5% Si3N4 covers both si...
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Silicon-on-Sapphire (11-02, R Plane), 5mm x 5mm x 0.46 mm, 2sp, Film: 0.5um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/-1...
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Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
Regular price $115.00Regular priceUnit price per -
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:1.0 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness:0.6 um +/- 1...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 um +/- 10%R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um +/- 10% R...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Specification: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +/- ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 1.0 u...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick
Specifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.6 um ...
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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick
Specifications Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0.5 um +...
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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
Specifications Specifications Device Layer Size: 5mmx5mm Type/Dopant: N type/P-doped Orientation: &...
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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Specifications PSpecifications Device Layer Diameter: 6" Type/Dopant: N type/P-doped Orientation: ...
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SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)
Specifications Device Layer Size: 10x10 Type/Dopant: N type/P-doped Orientation: <1-0-0>+/-0....
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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
Specifications Film: 4H-SiC (0001) Film target thickness: 11 um with (thickness acceptation range) +/- 10% Conductive Type ...
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4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US
Specifications Film: 4H-SiC (0001) Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10% Film target do...
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