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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US
Specifications: Research Grade , about 90 % usable area GaN template, N+, 2” in diameter FLAAT (Flat Layers At All Temperatures) GaN ...
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GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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FTO Glass Substrate (TEC 70) 100x100 x 3.2 mm, R:58-72 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) coated Glass Plates ( Corning brand-TEC70 ) Dimension: 100x100 x 3.2 mm Nominal FTO Film thi...
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FTO Glass Substrate (TEC 70) 1.0" x 3" x 3.2 mm, R: 58-72 ohm/sq ,25pcs /pack - FTO257632TEC70gp25
Specifications: Fluorine-Tin-Oxide (FTO) coated Glass Plates (TEC70 ) Dimension: 1" x 3" x 3.2 mm Nominal FTO Film thickness: 150 nmRe...
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FTO Glass Substrate (TEC 7) with Pattern 1" x 1" x 1.1 mm, R: 7-10 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates, with Pattern Dimension: 1" x 1" x 1.1 mm Nominal FTO Film thickness: ...
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FTO Glass Substrate (TEC 7) 20mm x 20mm x 3.0 mm, R: 6-8 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates (TEC7 ) Dimension:20mm x 20mm x 3.0 mm Nominal FTO Film thickness: 250...
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FTO Glass Substrate (TEC 7) 100 x 100 x 1.1 mm, R: 7-10 ohm/sq 5 pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates Dimension: 100 mm x 100 mm x 1.1 mm Nominal FTO Film thickness: 250 nm...
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FTO Glass Substrate (TEC 7) 1.0" x 3" x 3.0 mm, 6-8 ohm/sq, 25pcs /pack - FTO257630TEC7gp25
Specifications: Fluorine-Tin-Oxide (FTO) Coated Glass Plates (TEC7 ) Dimension: 1" x 3" x 3.0mm Nominal FTO Film thickness: 250 nm Re...
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FTO Glass Substrate (TEC 7) 1" x 1" x 3.0 mm, R: 6-8 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates (TEC7 ) Dimension: 1" x 1" x 3.0 mm Nominal FTO Film thickness: 250 nm...
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FTO Glass Substrate (TEC 7) 1" x 1" x 1.1 mm, R: 7-10 ohm/sq 25pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) Coated on Glass Plates Dimension: 1" x 1" x 1.1 mm Nominal FTO Film Thickness: 250 nm Resist...
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FTO Glass Substrate (TEC 15) 100 x 100 x 3.0 mm, R: 12-14 ohm/sq 25 pcs /pack
Specifications: Fluorine-Tin-Oxide (FTO) coated Glass Plates (TEC15 ) Dimension: 100 x 100 x 3.0 mm Nominal FTO Film thickness: 2...
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Electric Conductive Diamond Film on Insulator(DCI), 5x5 mm , 2 um Thick,
Specifications: Film:UNCD (Ultrananocrystalline Diamond) Wafer Size: 5x5x0.5mm Si wafer Orientation: (100) + / - 0.5o Insulating Layer: ...
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Diamond on Silicon Wafer(DOS), 5x5mm , 2 um Thick, 10 nm Ra
Specifications: Wafer Size:5mmx5mmx0.5mm Silicon wafer Orientation: (100) + / - 0.5o Diamond film thickness: 2 micron Resistivity: ...
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Diamond on Oxide Wafer(DOI), 5 mm x 5 mm, 2um Thick, 10nm Ra
Specifications: Film: UNCD (Ultra nanocrystalline Diamond) Wafer Size: 5x5x0.5mm Si wafer Orientation: (100) + / - 0.5o Insulating Layer...
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Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta di...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (5x5 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffus...
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 100 nm Thickness of Ta di...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Th...
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Specifications: Cu coated SiO2/Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusio...
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Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Specifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness ...
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