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SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp SiO2=300nm Ti=10nm Pt(111)=150n...
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SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm
Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp) SiO2=300 nm ...
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SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) R...
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SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Specifications: Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) Substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm) Res...
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Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1
Nickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) - oriented polycrystals Silicon Wafer Specifications: Conductiv...
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Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Film Specifications Nickel Film Thickness: 100nm Film Crystallinity: (111) - oriented polycrystals Silicon Wafer Specifications: C...
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500nm-thick Mo-coated Sodalime Glass, 25 mm(L) x 25 mm(W) x 0.7 mm th - FmMoCoatedGlass252507FT500
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo dep...
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500nm-thick Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th - Mo-coated Glass-201507
Specifications: Mo-coated Sodalime glass -Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side - Mo de...
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ITO/ZnO Coated Glass Substrate 1" x 1" x 0.7 mm, ITO Film=100nm, ZnO film=50nm
Specifications: ITO/ZnO Coated Sodalime Glass ITO film=100nm,ZnO film=50nm Dimension: 1" x 1" x 0.7 mm Resistivity: N/A IT...
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ITO film on Corning 7980,10x10x 0.5mm R: 9-15 ohm/sq - FmITOonCorning7980101005US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 10x10x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq No...
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ITO film (180 nm) on Corning 7980, 6 "x 6"x 0.5mm R: 9-15 ohm/sq, - FmITOonCorning798015215205US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 6 "x 6"x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq ...
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ITO film (180 nm) on Corning 7980, 1 "x 1"x 0.5mm R: 9-15 ohm/sq - FmITOonCorning7980252505US
Specifications: Indium-Tin-Oxide (ITO) coated Glass Plates Dimension: 1"x 1"x 0.5mm R: 9-15 ohm/sq, Resistivity: 9-15 ohm/sq No...
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ITO Coated Plastic PET Film, 0.175mm Thick x 350mm Width x 300 mm Length ,60 ohm/sq-1
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Surface: Industrial grade Dimension: 350...
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ITO Coated Plastic PET Film, 0.175mm Thick x 350mm Width x 1 Meter Length ,60 ohm/sq
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Surface: Industrial grade Dimension: 350 mm widt...
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ITO Coated Plastic PET Film, 0.175mm Thick x 300mm Width x 300mm Length, 14 ohm/sq, ITO layer: 115nm+/- 10nm
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Coating method: Magnetron sputtering Dimensi...
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ITO Coated Plastic PET Film, 0.175mm Thick x 300mm W x 1 M ,R<=14 ohm/sq, ITO layer: 115nm
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PET Coating method: Magnetron sputtering Dimension...
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ITO Coated PEN Plastic Film, 0.125mm Thick x 72mm W x 105mm L, 12 ohm/sq, PEN layer=0.125 mm, ITO layer>180 nm
Specifications: Plastic materials: PEN (DuPont Teijin Teonex) film-Q65HA Coating method: Magnetron sputtering Dimension: 72 mm width ...
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ITO Coated PEN Plastic Film, 0.125 Tx210Wx297L (mm),12 ohm/sq, ITO layer>180 nm - ITO-PEN-15K
Specifications: Indium-Tin-Oxide (ITO) coated plastic film Plastic materials: PEN (DuPont Teijin Teonex ) film-Q65HA Coating method: ...
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Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition Substrate: N-type S doped InP [100]±0.5°, Nc=~5E18/cc Wafer Size: 3" di...
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi-Insula...
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2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm
2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition Specifications: Substrate: InP Orientation: (100) Doped...
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Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um
GaN Template on saphire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga ...
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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten G...
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